2SA496 Datasheet - INCHANGE

2SA496, PNP Transistor

isc Silicon PNP Power Transistor DESCRIPTION *Collector-Emitter Breakdown Voltage- V(BR)CEO= -30V (Min.) *Collector-Emitter Saturation Voltag

Applications

* Designed for medium power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A IE Emitter Current-Conti

2SA496-INCHANGE.pdf