2SA499 Datasheet - Toshiba

2SA499 Silicon PNP Epitaxial Transistor

2SA499 Features

* High Breakdown Voltage : VcBO=-50V (Min.) (2SA499) : VCBO=-30V (Min.) (2SA500)

* High Transition Frequency : f T=250MHz (Typ.)

* Fast Switching Speed : t on=25ns (Typ.)

* Complementary to 2SC400 and 2SC979. INDUSTRIAL APPLICATIONS Unit in mm MZf4.95MAX 00.45 02.54

Datasheet Details

2SA499

117.56 KB

Silicon pnp epitaxial transistor.

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2SA499 Silicon PNP Epitaxial Transistor Toshiba

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