2SB1371 Datasheet - INCHANGE

2SB1371, PNP Transistor

isc Silicon PNP Power Transistor 2SB1371 DESCRIPTION *Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) *Good Linearity of hFE

Applications

* Designed for high power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICP Collector Current-Pulse C

2SB1371-INCHANGE.pdf