2SB1382 Datasheet, Transistor, INCHANGE

PDF File Details

Part number:

2SB1382

Manufacturer:

INCHANGE

File Size:

218.89kb

Download:

📄 Datasheet

Description:

Pnp transistor.

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min)

High DC Current Gain- : hFE= 2000( Min.) @(IC= -8A, VCE

2SB1382 Application

• Applications
• Designed for chopper regulator, DC motor driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL P

TAGS

2SB1382

INCHANGE

📁 Related Datasheet

2SB1381 - TRANSISTOR (Toshiba Semiconductor)
.

2SB1381 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor .. Product Specification Silicon PNP Power Transistors 2SB1381 DESCRIPTION ·With TO-220F package ·Compleme.

2SB1381 - PNP Transistor (INCHANGE)
isc Silicon PNP Darlington Power Transistor 2SB1381 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- .

2SB1382 - Silicon PNP Transistor (Sanken electric)
(2 k Ω) (80 Ω) E Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1382 –120 –120 –6 –16(Pulse–26) –1 75(Tc=25.

2SB1382 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor .. Product Specification Silicon PNP Darlington Power Transistors 2SB1382 DESCRIPTION ·With TO-3PML packag.

2SB1383 - Silicon PNP Transistor (Sanken electric)
(2 k Ω) (80 Ω) E Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1383 –120 –120 –6 –25(Pulse–40) –2 120(Tc=2.

2SB1383 - PNP Transistor (INCHANGE)
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.)@ IC= -12A, VCE= -4V ·High Collector-Emitter Breakdown.

2SB1386 - Low Frequency Transistor (Rohm)
Transistors Low Frequency Transistor (*20V,*5A) 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436 FFeatures 1) Low VCE(sat). VCE(sat) = *0.35V (Typ.) (IC / IB = .

2SB1386 - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
2SB1386 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP 。Silicon PNP transistor in a SOT-89 Plastic Package.  / Features ,, 2SD2098 。 Lo.

2SB1386 - PNP Silicon Epitaxial Planar Transistor (GME)
Production specification PNP Silicon Epitaxial Planar Transistor FEATURES z Low VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A). Pb Lead-free z Excellent .