2SB1419 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min). Wide Area of Safe Operation. Minimum Lot-to-Lot variations for robust device.

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Datasheet Specifications

Part number: 2SB1419
Manufacturer: INCHANGE
File Size: 195.49 KB
Datasheet: 2SB1419-INCHANGE.pdf
Description: PNP Transistor

Applications

* Power amplifier applications
* Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Co

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2SB1419 PNP Transistor INCHANGE

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