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2SB1404 PNP Transistor

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Description

isc Silicon PNP Darlington Power Transistor 2SB1404 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -1. Minimum Lot-t.

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Datasheet Specifications

Part number
2SB1404
Manufacturer
INCHANGE
File Size
209.73 KB
Datasheet
2SB1404-INCHANGE.pdf
Description
PNP Transistor

Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector

2SB1404 Distributors

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PNP Transistor INCHANGE
INCHANGE 2SB1404-like datasheet