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2SB1430 PNP Transistor

2SB1430 Description

isc Silicon PNP Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -2A). Low Collector S.

2SB1430 Applications

* Designed for low-frequency power amplifiers and lowspeed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous

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Datasheet Details

Part number
2SB1430
Manufacturer
INCHANGE
File Size
214.87 KB
Datasheet
2SB1430-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB1430-like datasheet