Datasheet4U Logo Datasheet4U.com

2SB1402 - PNP Transistor

2SB1402 Description

isc Silicon PNP Darlington Power Transistor 2SB1402 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -1. Minimum Lot-t.

2SB1402 Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector

📥 Download Datasheet

Preview of 2SB1402 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SB1402
Manufacturer
INCHANGE
File Size
209.71 KB
Datasheet
2SB1402-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • 2SB1400 - Silicon PNP Epitaxial Transistor (Hitachi Semiconductor)
  • 2SB1401 - Low frequency power amplifier (Hitachi)
  • 2SB1403 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB1404 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB1405 - PNP Epitaxial Silicon Transistor (Sanyo Semicon Device)
  • 2SB1406 - PNP Epitaxial Planar Silicon Darlington Transistor (Sanyo Semicon Device)
  • 2SB1407 - Silicon PNP epitaxial planer type Transistor (Hitachi Semiconductor)
  • 2SB1407L - Silicon PNP Epitaxial Transistor (Hitachi Semiconductor)

📌 All Tags

PNP Transistor INCHANGE
INCHANGE 2SB1402-like datasheet