2SB1429 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor .
High Current Capability. High Power Dissipation. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min). Complement to Type 2SD2.

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Datasheet Specifications

Part number: 2SB1429
Manufacturer: INCHANGE
File Size: 199.37 KB
Datasheet: 2SB1429-INCHANGE.pdf
Description: PNP Transistor

Applications

* Power amplifier applications
* Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -

2SB1429 Distributors

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2SB1429 PNP Transistor INCHANGE

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