2SB1470 PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlington Power Transistor .
High forward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Minimum Lot-to-Lot variations for robust d.

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Datasheet Specifications

Part number: 2SB1470
Manufacturer: INCHANGE
File Size: 200.13 KB
Datasheet: 2SB1470-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for power amplification
* Optimum for 120W HiFi output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuou

2SB1470 Distributors

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2SB1470 PNP Transistor INCHANGE

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