Datasheet4U Logo Datasheet4U.com

2SB1470 PNP Transistor

2SB1470 Description

isc Silicon PNP Darlington Power Transistor .
High forward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Minimum Lot-to-Lot variations for robust d.

2SB1470 Applications

* Designed for power amplification
* Optimum for 120W HiFi output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuou

📥 Download Datasheet

Preview of 2SB1470 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
2SB1470
Manufacturer
INCHANGE
File Size
200.13 KB
Datasheet
2SB1470-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • 2SB1471 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SB1472 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SB1474 - Power Transistor (Rohm)
  • 2SB1475 - PNP SILICON EPITAXIAL TRANSISTOR (NEC)
  • 2SB1476 - PNP Transistor (Sanken Electric)
  • 2SB1477 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB1478 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB1400 - Silicon PNP Epitaxial Transistor (Hitachi Semiconductor)

📌 All Tags

PNP Transistor INCHANGE
INCHANGE 2SB1470-like datasheet