2SB1490 Datasheet - INCHANGE

2SB1490, PNP Transistor

isc Silicon PNP Darlington Power Transistor DESCRIPTION *High DC Current Gain- : hFE= 5000(Min)@IC= -6A *Low-Collector Saturation Voltage- :

Applications

* Designed for power amplifier applications
* Optimum for 80W HiFi output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-C

2SB1490-INCHANGE.pdf