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2SB1495 PNP Transistor

2SB1495 Description

isc Silicon PNP Darlington Power Transistor 2SB1495 .
High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -2A). Low-Collector Saturation Voltage- : VCE(sat)= -1. Complem.

2SB1495 Applications

* Designed for high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -3 A ICM Collector Current-P

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Datasheet Details

Part number
2SB1495
Manufacturer
INCHANGE
File Size
226.77 KB
Datasheet
2SB1495-INCHANGE.pdf
Description
PNP Transistor

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INCHANGE 2SB1495-like datasheet