2SB1556 PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min). High DC Current Gain- : hFE= 5000(Min)@IC= -7A. Complement to Type 2SD2385.

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Datasheet Specifications

Part number: 2SB1556
Manufacturer: INCHANGE
File Size: 217.16 KB
Datasheet: 2SB1556-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IB Base Current-Continuous

2SB1556 Distributors

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2SB1556 PNP Transistor INCHANGE

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