2SB722 - PNP Transistor
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) *High Power Dissipation- : PC= 150W(Max)@TC=25℃ *High Current Capability *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for power amplifier applications.
ABS
