2SB722 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min). High Power Dissipation- : PC= 150W(Max)@TC=25℃. High Current Capability.

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Datasheet Specifications

Part number: 2SB722
Manufacturer: INCHANGE
File Size: 203.02 KB
Datasheet: 2SB722-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Baser Current-Continuou

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2SB722 PNP Transistor INCHANGE

INCHANGE 2SB722-like datasheet