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2SB722 - PNP Transistor

2SB722 Description

isc Silicon PNP Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min). High Power Dissipation- : PC= 150W(Max)@TC=25℃. High Current Capability.

2SB722 Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Baser Current-Continuou

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Datasheet Details

Part number
2SB722
Manufacturer
INCHANGE
File Size
203.02 KB
Datasheet
2SB722-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB722-like datasheet