Datasheet4U Logo Datasheet4U.com

2SB723 - PNP Transistor

2SB723 Description

isc Silicon PNP Power Transistors 2SB723 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min). High Power Dissipation- : PC= 150W(Max)@TC=25℃. High Current Capability.

2SB723 Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Baser Current-Continuou

📥 Download Datasheet

Preview of 2SB723 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SB723
Manufacturer
INCHANGE
File Size
207.54 KB
Datasheet
2SB723-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • 2SB722 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB726 - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SB727 - Silicon PNP Transistor (Hitachi Semiconductor)
  • 2SB727K - Silicon PNP Transistor (Hitachi Semiconductor)
  • 2SB703 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB705A - Silicon PNP Power Transistors (SavantIC)
  • 2SB705B - Silicon PNP Power Transistors (SavantIC)
  • 2SB706 - PNP/NPN SILICON TRANSISTOR (ETC)

📌 All Tags

PNP Transistor INCHANGE
INCHANGE 2SB723-like datasheet