Datasheet4U Logo Datasheet4U.com

2SB727 PNP Transistor

2SB727 Description

isc Silicon PNP Darlington Power Transistor 2SB727 .
High DC Current Gain- : hFE = 1000(Min)@ IC= -3A. Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min). Low Collector-Emitter Sat.

2SB727 Applications

* Medium speed and power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -6 A ICM Collector Current-P

📥 Download Datasheet

Preview of 2SB727 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SB727
Manufacturer
INCHANGE
File Size
210.18 KB
Datasheet
2SB727-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • 2SB727K - Silicon PNP Transistor (Hitachi Semiconductor)
  • 2SB722 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB726 - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SB703 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB705A - Silicon PNP Power Transistors (SavantIC)
  • 2SB705B - Silicon PNP Power Transistors (SavantIC)
  • 2SB706 - PNP/NPN SILICON TRANSISTOR (ETC)
  • 2SB706A - PNP/NPN SILICON TRANSISTOR (ETC)

📌 All Tags

PNP Transistor INCHANGE
INCHANGE 2SB727-like datasheet