2SB747 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min). Good Linearity of hFE. Wide Area of Safe Operation. Complement to Type 2S.

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Datasheet Specifications

Part number: 2SB747
Manufacturer: INCHANGE
File Size: 213.81 KB
Datasheet: 2SB747-INCHANGE.pdf
Description: PNP Transistor

Applications

* High power amplifier applications.
* Suitable for 15~20W home stereo output amplifier and voltage regulator. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC

2SB747 Distributors

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2SB747 PNP Transistor INCHANGE

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