Datasheet4U Logo Datasheet4U.com

2SB996 PNP Transistor

2SB996 Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min). Good Linearity of hFE. Complement to Type 2SD1356. Minimum Lot-to-Lot var.

2SB996 Applications

* Power amplifier applications.
* Recommended for 20~25W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC

📥 Download Datasheet

Preview of 2SB996 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SB996
Manufacturer
INCHANGE
File Size
212.76 KB
Datasheet
2SB996-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • 2SB997 - Silicon PNP Transistor (Toshiba)
  • 2SB998 - Silicon PNP Transistor (Toshiba)
  • 2SB999 - Silicon PNP Transistor (Toshiba)
  • 2SB900 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB902 - PNP Epitaxial Planar Silicon Transistors (Panasonic)
  • 2SB903 - PNP Transistor (Sanyo Semicon Device)
  • 2SB904 - PNP Transistor (Sanyo Semicon Device)
  • 2SB905 - PNP Transistor (Toshiba Semiconductor)

📌 All Tags

PNP Transistor INCHANGE
INCHANGE 2SB996-like datasheet