* . High DC Current Gain,: hFE=2000(Min. ) (at Vce=-3V, Ic=-3A; . Low Saturation Voltage : VcE(sat)=-l .5V(Max. ) (at Ic=-3A^ . Complementary to 2SD1357, 2SD1358 and 2SD1359 INDUSTRIAL APPLICATIONS Unit in mm 10.3 MAX 03.2±O.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage 2SB997
2SB998
115.96 KB
Silicon pnp transistor.
:
E557
2SB998
2SB999I
SILICON PNP TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICA.
📁 Related Datasheet
2SB991 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB991
DESCRIPTION ·Collector-Emitter BreakdownVoltage-
: V(BR)CEO= -180V(Min.) ·Low Collect.
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HIGH CURRENT SWITCHING APPLICATIONS.
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FEATURES . High Collector C.
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..
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(INCHANGE)
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DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min) ·Collector Power Dissipation-
: PC= 40W@ TC=.
2SB993 - SILICON PNP TRANSISTOR
(Toshiba)
•
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
2SB993
HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.
FEATURES
—. High Collect.
2SB993 - SILICON POWER TRANSISTOR
(SavantIC)
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2SB993
DESCRIPTION ·With TO-220 package ·Low collec.
2SB994 - PNP Transistor
(INCHANGE)
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DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·Collector Power Dissipation-
: PC= 30W@ TC=.
