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2SB997, 2SB998 Datasheet - Toshiba

2SB997 Silicon PNP Transistor

2SB997 Features

* . High DC Current Gain,: hFE=2000(Min. ) (at Vce=-3V, Ic=-3A; . Low Saturation Voltage : VcE(sat)=-l .5V(Max. ) (at Ic=-3A^ . Complementary to 2SD1357, 2SD1358 and 2SD1359 INDUSTRIAL APPLICATIONS Unit in mm 10.3 MAX 03.2±O.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage 2SB997

2SB998_Toshiba.pdf

This datasheet PDF includes multiple part numbers: 2SB997, 2SB998. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

2SB997, 2SB998

Manufacturer:

Toshiba ↗

File Size:

115.96 KB

Description:

Silicon pnp transistor.

Note:

This datasheet PDF includes multiple part numbers: 2SB997, 2SB998.
Please refer to the document for exact specifications by model.

2SB997 Distributor

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2SB997 2SB998 Silicon PNP Transistor Toshiba