2SC1162 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
High Collector Current IC= 2. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min). Good Linearity of hFE. Low Collector Satu.

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Datasheet Specifications

Part number: 2SC1162
Manufacturer: INCHANGE
File Size: 210.85 KB
Datasheet: 2SC1162-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2.5 A ICM Collector Cur

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2SC1162 NPN Transistor INCHANGE

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