Datasheet4U Logo Datasheet4U.com

2SC1162 NPN Transistor

2SC1162 Description

isc Silicon NPN Power Transistor .
High Collector Current IC= 2. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min). Good Linearity of hFE. Low Collector Satu.

2SC1162 Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2.5 A ICM Collector Cur

📥 Download Datasheet

Preview of 2SC1162 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SC1162
Manufacturer
INCHANGE
File Size
210.85 KB
Datasheet
2SC1162-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SC1161 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC1163 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC1164 - SILICON NPN TRANSISTOR (Toshiba)
  • 2SC1165 - Silicon NPN epitaxial planer type Transistor (Toshiba)
  • 2SC1166 - Silicon NPN Transistor (ETC)
  • 2SC1169 - Silicon NPN Transistor (Toshiba Semiconductor)
  • 2SC1102 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC1106 - SILICON POWER TRANSISTOR (SavantIC)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SC1162-like datasheet