2SC2535 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2535 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). High Switching Speed. 100% avalanche tested. Minimum Lot-to-Lot variation.

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Datasheet Specifications

Part number: 2SC2535
Manufacturer: INCHANGE
File Size: 168.97 KB
Datasheet: 2SC2535-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Col

2SC2535 Distributors

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NPN Transistor INCHANGE

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