Datasheet4U Logo Datasheet4U.com

2SC2565 - NPN Transistor

2SC2565 Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min). Good Linearity of hFE. Complement to Type 2SA1095. Minimum Lot-to-Lot.

2SC2565 Applications

* Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC

📥 Download Datasheet

Preview of 2SC2565 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SC2565
Manufacturer
INCHANGE
File Size
216.65 KB
Datasheet
2SC2565-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SC2561 - Silicon NPN Epitaxial Planar Transistor (Panasonic Semiconductor)
  • 2SC2563 - Silicon NPN Transistor (Toshiba)
  • 2SC2500 - TRANSISTOR (Toshiba Semiconductor)
  • 2SC2504 - Transistor (Shindengen)
  • 2SC2506 - Transistor (SHINDENGEN)
  • 2SC2508 - Silicon NPN POWER TRANSISTOR (HGSemi)
  • 2SC2509 - Silicon NPN epitaxial planar type Transistor (Toshiba)
  • 2SC2510 - Silicon NPN Epitaxial Planar Type Transistor (Toshiba Semiconductor)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SC2565-like datasheet

2SC2565 Stock/Price