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2SC3257 NPN Transistor

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Description

isc Silicon NPN Power Transistor 2SC3257 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device perform.

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Datasheet Specifications

Part number
2SC3257
Manufacturer
INCHANGE
File Size
188.51 KB
Datasheet
2SC3257-INCHANGE.pdf
Description
NPN Transistor

Applications

* Switching regulator and high voltage switching applications.
* High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Coll

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