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2SC3376 Silicon NPN Power Transistor

2SC3376 Description

isc Silicon NPN Power Transistor 2SC3376 .
Collector-Emiiter Breakdown Voltage- : V(BR)CEO= 800V(Min. High Speed Switching. Minimum Lot-to-Lot variations for robust de.

2SC3376 Applications

* Switching regulator and high voltage switching applications.
* High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Col

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Datasheet Details

Part number
2SC3376
Manufacturer
INCHANGE
File Size
197.74 KB
Datasheet
2SC3376-INCHANGE.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor INCHANGE
INCHANGE 2SC3376-like datasheet