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2SC3466 NPN Transistor

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Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage- : V(BR)CBO= 1200V(Min). Fast Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-Lot variations for.

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Datasheet Specifications

Part number
2SC3466
Manufacturer
INCHANGE
File Size
198.61 KB
Datasheet
2SC3466-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 650 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak

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