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2SC3559 NPN Transistor

2SC3559 Description

isc Silicon NPN Power Transistor 2SC3559 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V (Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device p.

2SC3559 Applications

* Switching regulator and high voltage switching applications.
* High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Coll

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Datasheet Details

Part number
2SC3559
Manufacturer
INCHANGE
File Size
192.71 KB
Datasheet
2SC3559-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SC3559-like datasheet