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2SC3577 NPN Transistor

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Description

isc Silicon NPN Power Transistor 2SC3577 .
High Collector-Base Breakdown Voltage- : V(BR)CBO= 850V(Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device perfo.

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Datasheet Specifications

Part number
2SC3577
Manufacturer
INCHANGE
File Size
191.50 KB
Datasheet
2SC3577-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V VCEO Collector-Emitter Voltage 650 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 5 A I

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