2SC3795B NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min. Low Collector Saturation Voltage. High Speed Switching. Minimum Lot-to-Lot.

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Datasheet Specifications

Part number: 2SC3795B
Manufacturer: INCHANGE
File Size: 210.21 KB
Datasheet: 2SC3795B-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCES Collector-Emitter Voltage 1000 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-C

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2SC3795B NPN Transistor INCHANGE

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