Datasheet4U Logo Datasheet4U.com

2SC3795B NPN Transistor

📥 Download Datasheet Datasheet Preview Page 1

Description

isc Silicon NPN Power Transistor .
Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min. Low Collector Saturation Voltage. High Speed Switching. Minimum Lot-to-Lot.

📥 Download Datasheet

Preview of 2SC3795B PDF
datasheet Preview Page 2

Datasheet Specifications

Part number
2SC3795B
Manufacturer
INCHANGE
File Size
210.21 KB
Datasheet
2SC3795B-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCES Collector-Emitter Voltage 1000 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-C

2SC3795B Distributors

📁 Related Datasheet

  • 2SC3795 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SC3795A - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SC3790 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SC3792 - NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SC3793 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SC3794A - SILICON POWER TRANSISTOR (SavantIC)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SC3795B-like datasheet