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2SC4429 NPN Transistor

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Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage- : V(BR)CEO= 800V(Min). Fast Switching speed. Wide Area of Safe Operation. Minimum Lot-to-Lot variations for r.

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Datasheet Specifications

Part number
2SC4429
Manufacturer
INCHANGE
File Size
221.19 KB
Datasheet
2SC4429-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICP Collector Current-Pulse

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