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2SC5439 NPN Transistor

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Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V(Min). High Switching Speed. 100% avalanche tested. Minimum Lot-to-Lot variation.

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Datasheet Specifications

Part number
2SC5439
Manufacturer
INCHANGE
File Size
169.57 KB
Datasheet
2SC5439-INCHANGE.pdf
Description
NPN Transistor

Applications

* Switching regulator applications.
* High voltage switching applications.
* DC-DC converter applications.
* Inverter lighting applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage VEBO Em

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