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2SC5407 NPN Transistor

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Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage. High Switching Speed. Wide Area of Safe Operation. 100% avalanche tested. Minimum Lot-to-Lot variations f.

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Datasheet Specifications

Part number
2SC5407
Manufacturer
INCHANGE
File Size
174.92 KB
Datasheet
2SC5407-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCES Collector-Emitter Voltage 1700 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Cu

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