2SD1263 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1263 .
Collector-Emitter Breakdown Voltage : V(BR)CEO= 250V(Min). High Collector Power Dissipation. 100% avalanche tested. Minimum Lot-to-Lo.

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Datasheet Specifications

Part number: 2SD1263
Manufacturer: INCHANGE
File Size: 190.13 KB
Datasheet: 2SD1263-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for power amplification applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.75 A ICM Collector Current-Peak

2SD1263 Distributors

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2SD1263 NPN Transistor INCHANGE

INCHANGE 2SD1263-like datasheet