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2SD1270 NPN Transistor

2SD1270 Description

isc Silicon NPN Power Transistor 2SD1270 .
Low Collector Saturation Voltage : VCE(sat)= 0. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min). Good Linearit.

2SD1270 Applications

* Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak Coll

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Datasheet Details

Part number
2SD1270
Manufacturer
INCHANGE
File Size
210.99 KB
Datasheet
2SD1270-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1270-like datasheet