2SD1276 NPN Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1276 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min). High Speed Switching. Complement to Type 2SB950. 100% avalanche tested.

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Datasheet Specifications

Part number: 2SD1276
Manufacturer: INCHANGE
File Size: 208.75 KB
Datasheet: 2SD1276-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for medium speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Curren

2SD1276 Distributors

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2SD1276 NPN Transistor INCHANGE

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