Datasheet4U Logo Datasheet4U.com

2SD1276 NPN Transistor

2SD1276 Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1276 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min). High Speed Switching. Complement to Type 2SB950. 100% avalanche tested.

2SD1276 Applications

* Designed for medium speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Curren

📥 Download Datasheet

Preview of 2SD1276 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
2SD1276
Manufacturer
INCHANGE
File Size
208.75 KB
Datasheet
2SD1276-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SD1276A - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD1270 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD1271 - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SD1271A - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD1272 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD1273 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD1273A - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD1274 - Silicon NPN Transistor (Panasonic Semiconductor)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SD1276-like datasheet