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2SD1277 NPN Transistor

2SD1277 Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min). High Speed Switching. Minimum Lot-to-Lot variations for robust device perform.

2SD1277 Applications

* Designed for medium speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Curren

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Datasheet Details

Part number
2SD1277
Manufacturer
INCHANGE
File Size
211.97 KB
Datasheet
2SD1277-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1277-like datasheet