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2SD1279 NPN Transistor

2SD1279 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1279 .
High Breakdown Voltage- : VCBO= 1400V (Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 5. Fast Switching S.

2SD1279 Applications

* Designed for high voltage power switching TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1400 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Con

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Datasheet Details

Part number
2SD1279
Manufacturer
INCHANGE
File Size
186.92 KB
Datasheet
2SD1279-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1279-like datasheet