2SD1296 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor 2SD1296 .
High DC Current Gain : hFE= 1000(Min. High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min). Low Collector.

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Datasheet Specifications

Part number: 2SD1296
Manufacturer: INCHANGE
File Size: 217.00 KB
Datasheet: 2SD1296-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for audio frequency power amplifier and low speed high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VCEO(SUS) Collector-Emitter Voltage 80 V

2SD1296 Distributors

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2SD1296 NPN Transistor INCHANGE

INCHANGE 2SD1296-like datasheet