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2SD1296 NPN Transistor

2SD1296 Description

isc Silicon NPN Darlington Power Transistor 2SD1296 .
High DC Current Gain : hFE= 1000(Min. High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min). Low Collector.

2SD1296 Applications

* Designed for audio frequency power amplifier and low speed high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VCEO(SUS) Collector-Emitter Voltage 80 V

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Datasheet Details

Part number
2SD1296
Manufacturer
INCHANGE
File Size
217.00 KB
Datasheet
2SD1296-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1296-like datasheet