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2SD1436 NPN Transistor

2SD1436 Description

isc Silicon NPN Darlington Power Transistor .
High DC Current Gain : hFE= 1000(Min. Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min). Complement to Type.

2SD1436 Applications

* Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak PC C

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Datasheet Details

Part number
2SD1436
Manufacturer
INCHANGE
File Size
212.18 KB
Datasheet
2SD1436-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1436-like datasheet