2SD1436 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
High DC Current Gain : hFE= 1000(Min. Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min). Complement to Type.

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Datasheet Specifications

Part number: 2SD1436
Manufacturer: INCHANGE
File Size: 212.18 KB
Datasheet: 2SD1436-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak PC C

2SD1436 Distributors

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2SD1436 NPN Transistor INCHANGE

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