2SD1532 NPN Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1532 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 4V. Fast Switching Speed.

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Datasheet Specifications

Part number: 2SD1532
Manufacturer: INCHANGE
File Size: 197.01 KB
Datasheet: 2SD1532-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous ICM

2SD1532 Distributors

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2SD1532 NPN Transistor INCHANGE

INCHANGE 2SD1532-like datasheet