2SD1531 Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min). Good Linearity of hFE. Low Collector Saturation Voltage. Minimum Lot-to-Lo.

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Datasheet Specifications

Part number: 2SD1531
Manufacturer: Inchange Semiconductor
File Size: 211.14 KB
Datasheet: 2SD1531_InchangeSemiconductor.pdf
Description: Power Transistor

Applications

* Designed for AF output amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICP Collector Current-Peak C

2SD1531 Distributors

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2SD1531 Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SD1531-like datasheet