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2SD1531 Datasheet - Inchange Semiconductor

2SD1531 Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) *Good Linearity of hFE *Low Collector Saturation Voltage *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for AF output amplifier applications. ABSOLUTE MAXIMUM R.

2SD1531_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SD1531

Manufacturer:

Inchange Semiconductor

File Size:

211.14 KB

Description:

Power transistor.

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2SD1531 2SD1531 Power Transistor Inchange Semiconductor

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