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2SD1535 NPN Transistor

2SD1535 Description

isc Silicon NPN Power Transistor .
Collector-Base Breakdown Voltage- : V(BR)CBO = 500V(Min. Wide Area of Safe Operation. Minimum Lot-to-Lot variations for robust device p.

2SD1535 Applications

* Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 12 V IC Collector Current 7 A ICM Collector Current-peak 14 A

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Datasheet Details

Part number
2SD1535
Manufacturer
INCHANGE
File Size
207.51 KB
Datasheet
2SD1535-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1535-like datasheet