2SD1535 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Base Breakdown Voltage- : V(BR)CBO = 500V(Min. Wide Area of Safe Operation. Minimum Lot-to-Lot variations for robust device p.

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Datasheet Specifications

Part number: 2SD1535
Manufacturer: INCHANGE
File Size: 207.51 KB
Datasheet: 2SD1535-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 12 V IC Collector Current 7 A ICM Collector Current-peak 14 A

2SD1535 Distributors

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2SD1535 NPN Transistor INCHANGE

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