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2SD1592 NPN Transistor

2SD1592 Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1592 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min). High DC Current Gain : hFE= 400(Min) @ IC= 2A, VCE= 2V. Low Collector-Em.

2SD1592 Applications

* High voltage and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous ICM Collector Current-Peak I

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Datasheet Details

Part number
2SD1592
Manufacturer
INCHANGE
File Size
189.63 KB
Datasheet
2SD1592-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1592-like datasheet