2SD1592 NPN Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1592 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min). High DC Current Gain : hFE= 400(Min) @ IC= 2A, VCE= 2V. Low Collector-Em.

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Datasheet Specifications

Part number: 2SD1592
Manufacturer: INCHANGE
File Size: 189.63 KB
Datasheet: 2SD1592-INCHANGE.pdf
Description: NPN Transistor

Applications

* High voltage and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous ICM Collector Current-Peak I

2SD1592 Distributors

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2SD1592 NPN Transistor INCHANGE

INCHANGE 2SD1592-like datasheet