2SD1592 - NPN Transistor
*High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) *High DC Current Gain : hFE= 400(Min) @ IC= 2A, VCE= 2V *Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 2A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLI
