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2SD1966 - NPN Transistor

2SD1966 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1966 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Good Linearity of hFE. Low Saturation Voltage. Minimum Lot-to-Lot var.

2SD1966 Applications

* Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.7 A ICP Collector Current-Pulse PC

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Datasheet Details

Part number
2SD1966
Manufacturer
INCHANGE
File Size
177.41 KB
Datasheet
2SD1966-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1966-like datasheet