2SD1966 Datasheet, Transistor, INCHANGE

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2SD1966

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INCHANGE

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177.41kb

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📄 Datasheet

Description:

Npn transistor.

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min)

Good Linearity of hFE

Low Saturation Voltag

2SD1966 Application

• Applications
• Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-B

TAGS

2SD1966

INCHANGE

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