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2SD1966 - NPN Transistor

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Part number 2SD1966
Manufacturer INCHANGE
File Size 177.41 KB
Description NPN Transistor
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High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Good Linearity of hFE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.7 A ICP Col

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