2SD2023 Datasheet - INCHANGE

2SD2023, NPN Transistor

isc Silicon NPN Power Transistor DESCRIPTION *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) *Low Collector Saturation Voltage :

Applications

* Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Total Power Dissipation @

2SD2023-INCHANGE.pdf