2SD2024 Datasheet, Transistor, INCHANGE

PDF File Details

Part number:

2SD2024

Manufacturer:

INCHANGE

File Size:

205.81kb

Download:

📄 Datasheet

Description:

Npn transistor.

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min)

High DC Current Gain- : hFE= 1000(Min)@ (VCE= 3V, IC= 2A

2SD2024 Application

• Applications
• Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-B

TAGS

2SD2024

INCHANGE

📁 Related Datasheet

2SD2020 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2020 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min) ·Wide .

2SD2021 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2021 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min) ·Wide .

2SD2022 - NPN Transistor (INCHANGE)
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2022 DESCRIPTION ·High DC Current Gain- : hFE = 3000(Min)@ IC= 1A ·Low Collect.

2SD2023 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2023 .. DESCRIPTION ·With TO-220C package ·Complem.

2SD2023 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Low Collector Saturation Voltage : VCE(sat).

2SD2024 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2024 .. DESCRIPTION ·With TO-220C package ·High DC.

2SD2025 - Silicon NPN Power Transistors (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2025 DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low s.

2SD2025 - NPN Transistor (INCHANGE)
isc Silicon NPN Darlington Power Transistor 2SD2025 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain- :.

2SD2027 - Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor 2SD2027 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of.

2SD2028 - NPN Transistor (Sanyo Semicon Device)
Ordering number:EN2803 NPN Epitaxial Planar Silicon Transistor 2SD2028 Low-Frequency Power Amplifier Applications Features · With Zener diode (11±3V.