2SD2025 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor 2SD2025 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). High DC Current Gain- : hFE= 1000(Min)@ (VCE= 3V, IC= 2A). Complement to Type.

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Datasheet Specifications

Part number: 2SD2025
Manufacturer: INCHANGE
File Size: 208.36 KB
Datasheet: 2SD2025-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak Coll

2SD2025 Distributors

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2SD2025 NPN Transistor INCHANGE

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