Datasheet4U Logo Datasheet4U.com

2SD2025 NPN Transistor

2SD2025 Description

isc Silicon NPN Darlington Power Transistor 2SD2025 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). High DC Current Gain- : hFE= 1000(Min)@ (VCE= 3V, IC= 2A). Complement to Type.

2SD2025 Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak Coll

📥 Download Datasheet

Preview of 2SD2025 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SD2025
Manufacturer
INCHANGE
File Size
208.36 KB
Datasheet
2SD2025-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SD2023 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD2024 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD2027 - Power Transistor (Inchange Semiconductor)
  • 2SD2028 - NPN Transistor (Sanyo Semicon Device)
  • 2SD2029 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD2000 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD2005 - NPN Transistor (ROHM)
  • 2SD2006 - NPN Transistor (Rohm)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SD2025-like datasheet