2SD2029 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor 2SD2029 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min). Wide Area of Safe Operation. Complement to Type 2SB1347. Minimum Lot-to-L.

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Datasheet Specifications

Part number: 2SD2029
Manufacturer: INCHANGE
File Size: 212.34 KB
Datasheet: 2SD2029-INCHANGE.pdf
Description: NPN Transistor

Applications

* Power amplifier applications
* Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Conti

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2SD2029 NPN Transistor INCHANGE

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