2SD2059 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2059 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). Collector Power Dissipation- : PC= 30W@ TC= 25℃. Low Collector Saturation Vol.

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Datasheet Specifications

Part number: 2SD2059
Manufacturer: INCHANGE
File Size: 209.79 KB
Datasheet: 2SD2059-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current-Continuous PC

2SD2059 Distributors

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2SD2059 NPN Transistor INCHANGE

INCHANGE 2SD2059-like datasheet