Datasheet4U Logo Datasheet4U.com

2SD2059 NPN Transistor

2SD2059 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2059 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). Collector Power Dissipation- : PC= 30W@ TC= 25℃. Low Collector Saturation Vol.

2SD2059 Applications

* Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current-Continuous PC

📥 Download Datasheet

Preview of 2SD2059 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SD2059
Manufacturer
INCHANGE
File Size
209.79 KB
Datasheet
2SD2059-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SD2050 - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SD2052 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD2000 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD2005 - NPN Transistor (ROHM)
  • 2SD2006 - NPN Transistor (Rohm)
  • 2SD2008 - 1.2W PACKAGE POWER TRANSISTOR (Rohm)
  • 2SD2009 - NPN Transistor (ROHM)
  • 2SD201 - SILICON POWER TRANSISTOR (SavantIC)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SD2059-like datasheet