2SD2257 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Saturation Voltage- : VCE(sat)= 1. High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V. Complemen.

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Datasheet Specifications

Part number: 2SD2257
Manufacturer: INCHANGE
File Size: 191.47 KB
Datasheet: 2SD2257-INCHANGE.pdf
Description: NPN Transistor

Applications

* High power switching applications
* Hammer drive, pulse motor drive applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuou

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2SD2257 NPN Transistor INCHANGE

INCHANGE 2SD2257-like datasheet